IRF640 18A 200 volt
N chanel power mosfet
Product Code: CT0640
$4.00
Pay it in 4 payments of $1.00 with 
| Buy 1+ | $4.00 (incl. GST) |
| Buy 10+ | $3.29 (incl. GST) |
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N-channel power MOSFET for fast switching applications, 200V, 18A
TO-220AB Package
Fifth Generation HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
D @ TC = 25C Continuous Drain Current, VGS @ 10V 18
D @ TC = 100C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 72
PD @TC = 25C Power Dissipation 150 W
Linear Derating Factor 1.0 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy. 247 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt . 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew. 10 lbf*in (1.1N*m) PDF DATA HERE
TO-220AB Package
Fifth Generation HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
D @ TC = 25C Continuous Drain Current, VGS @ 10V 18
D @ TC = 100C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 72
PD @TC = 25C Power Dissipation 150 W
Linear Derating Factor 1.0 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy. 247 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt . 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew. 10 lbf*in (1.1N*m) PDF DATA HERE
