IGBT 16 Amp 600 volt

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

600 vOLT
16 AMP

Features
High short circuit rating optimized for motor control,
tsc =10μs, @360V VCE (start), TJ = 125C,
VGE = 15V
Combines low conduction losses with high
switching speed
tighter parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC30KD2 and IRGBC30MD2
products
For hints see design tip 97003

PDF DATA HERE