PHOTOTRANSISTOR OPTOCOUPLER
H11D2 6 pin Dip = 4N38
Product Code: LA0235
DESCRIPTION
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
PDF DATA HERE
The H11D1 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
FEATURES
High Voltage
High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
PDF DATA HERE