PHOTOTRANSISTOR OPTOCOUPLER
H11D2 6 pin Dip = 4N38
SKU: LA0235
Available
$1.00
Volume Pricing
Buy 1+
$1.00
(incl. GST)
Buy 10+
$0.95
(incl. GST)
Henderson
In Stock
Albany
In Stock
NZ-wide delivery available
DESCRIPTION
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
PDF DATA HERE
The H11D1 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
FEATURES
High Voltage
High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
PDF DATA HERE
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