IR2112S HIGH AND LOW SIDE DRIVER

IR2112S HIGH AND LOW SIDE DRIVER
16-Lead SOIC (wide body)

VOFFSET 600V max.
IO+/- 200 mA / 420 mA
VOUT 10 - 20V
ton/off (typ.) 125 & 105 ns
Delay Matching 30 ns

Features
* Floating channel designed for bootstrap operation
* Fully operational to +600V
* Tolerant to negative transient voltage
dV/dt immune
* Gate drive supply range from 10 to 20V
* Undervoltage lockout for both channels
* 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground 5V offset
* CMOS Schmitt-triggered inputs with pull-down
* Cycle by cycle edge-triggered shutdown logic
* Matched propagation delay for both channels
* Outputs in phase with inputs
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET 600V max.
IO+/- 200 mA / 420 mA
VOUT 10 - 20V
ton/off (typ.) 125 & 105 ns
Delay Matching 30 ns
www.irf.com 1
Data Sheet No. PD60026 revS
IR2112(-1-2)(S)PbF
Description
The IR2112(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible
with standard CMOS or LSTTL outputs, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency applications. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600
volts.