IRFR9024 High current 8.8A P channel MOSFET

50 x IRFR9024 D Pac T0-252AA surface mount (29) 

l Ultra Low On-Resistance 
l P-Channel 
l Surface Mount (IRFR9024) 
l Advanced Process Technology 
l Fast Switching 
l Fully Avalanche Rated 

Description 
Parameter Max. Units 
ID @ TC = 25C Continuous Drain Current, VGS @ -10V -11 
ID @ TC = 100C Continuous Drain Current, VGS @ -10V -8 A 
IDM Pulsed Drain Current -44 
PD @TC = 25C Power Dissipation 38 W 
Linear Derating Factor 0.30 W/C 
VGS Gate-to-Source Voltage 20 V 
EAS Single Pulse Avalanche Energy 62 mJ 
IAR Avalanche Current -6.6 A 
EAR Repetitive Avalanche Energy 3.8 mJ 
dv/dt Peak Diode Recovery dv/dt -10 V/ns 
TJ Operating Junction and -55 to + 150 
TSTG Storage Temperature Range 
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 
C 
Absolute Maximum Ratings 

Fifth Generation HEXFET 
utilize advanced processing techniques to achieve 
extremely low on-resistance per silicon area. This 
benefit, combined with the fast switching speed and 
ruggedized device design that HEXFET Power 
MOSFETs are well known for, provides the designer 
with an extremely efficient and reliable device for use 
in a wide variety of applications.